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d a t a sh eet product speci?cation supersedes data of 2003 apr 01 2003 oct 20 discrete semiconductors bza800avl series quadruple low capacitance esd suppressor b ook, halfpage mbd127
2003 oct 20 2 philips semiconductors product speci?cation quadruple low capacitance esd suppressor bza800avl series features low diode capacitance low leakage current sot353 (sc-88a) surface mount package common anode configuration. applications communication systems computers and peripherals audio and video equipment. description monolithic transient voltage suppressor diode in a five lead sot353 (sc-88a) package for 4-bit wide esd transient suppression. marking pinning type number marking code BZA856AVL r3 bza862avl r2 bza868avl r1 pin description 1 cathode 1 2 common anode 3 cathode 2 4 cathode 3 5 cathode 4 handbook, halfpage mgt580 3 1 5 4 3 2 1 4 5 2 fig.1 simplified outline (sot353; sc-88a) and symbol. ordering information type number package name description version BZA856AVL - plastic surface mounted package; 5 leads sot353 bza862avl - plastic surface mounted package; 5 leads sot353 bza868avl - plastic surface mounted package; 5 leads sot353
2003 oct 20 3 philips semiconductors product speci?cation quadruple low capacitance esd suppressor bza800avl series limiting values in accordance with the absolute maximum rating system (iec 60134). notes 1. dc working current limited by p tot(max) . 2. device mounted on standard printed-circuit board. esd standards compliance thermal characteristics note 1. solder point of common anode (pin 2). symbol parameter conditions min. max. unit per diode i z working current t amb =25 c - note 1 ma i f continuous forward current t amb =25 c - 200 ma i fsm non-repetitive peak forward current t p = 1 ms; square pulse - 3.5 a p tot total power dissipation t amb =25 c; note 2; see fig.5 - 300 mw p zsm non repetitive peak reverse power dissipation square pulse; t p =1ms - 6w t stg storage temperature - 65 +150 c t j junction temperature - 150 c esd electrostatic discharge iec 61000-4-2 (contact discharge) 15 - kv hbm mil-std 883 10 - kv standard conditions iec 61000-4-2, level 4 (esd) >15 kv (air); >8 kv (contact discharge) hbm mil-std 883, class 3 >4 kv symbol parameter conditions value unit r th j-a thermal resistance from junction to ambient all diodes loaded 410 k/w r th j-s thermal resistance from junction to solder point; note 1 one diode loaded 200 k/w all diodes loaded 185 k/w
2003 oct 20 4 philips semiconductors product speci?cation quadruple low capacitance esd suppressor bza800avl series electrical characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit v f forward voltage i f = 200 ma -- 1.2 v i r reverse current BZA856AVL v r =3v -- 200 na bza862avl v r =4v -- 100 na bza868avl v r = 4.3 v -- 20 na v z working voltage i z =1ma BZA856AVL 5.32 5.6 5.88 v bza862avl 5.89 6.2 6.51 v bza868avl 6.46 6.8 7.14 v r dif differential resistance i z =1ma BZA856AVL -- 200 w bza862avl -- 150 w bza868avl -- 100 w s z temperature coef?cient i z =1ma BZA856AVL - 1.3 - mv/k bza862avl - 2.4 - mv/k bza868avl - 2.9 - mv/k c d diode capacitance f = 1 mhz; v r =0 BZA856AVL - 22 28 pf bza862avl - 18 22 pf bza868avl - 16 19 pf diode capacitance f = 1 mhz; v r =5v BZA856AVL - 12 17 pf bza862avl - 912pf bza868avl - 811pf i zsm non-repetitive peak reverse current t p = 1 ms; t amb =25 c BZA856AVL -- 0.90 a bza862avl -- 0.85 a bza868avl -- 0.80 a
2003 oct 20 5 philips semiconductors product speci?cation quadruple low capacitance esd suppressor bza800avl series handbook, halfpage 10 1 10 - 1 mld997 10 - 2 10 - 1 1 t p (ms) i zsm (a) 10 BZA856AVL bza862avl/bza868avl fig.2 maximum non-repetitive peak reverse current as a function of pulse time. handbook, halfpage 10 1 10 2 mld999 10 - 2 10 - 1 1 t p (ms) p zsm (w) 10 bza862avl BZA856AVL bza868avl fig.3 maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse). handbook, halfpage 05 26 6 10 14 18 22 1234 v r (v) c d (pf) mld998 bza862avl bza868avl BZA856AVL fig.4 diode capacitance as a function of reverse voltage; typical values. t j =25 c; f = 1 mhz. handbook, halfpage 050 t amb ( c) p tot (mw) 100 150 400 300 100 0 200 mld793 fig.5 power derating curve.
2003 oct 20 6 philips semiconductors product speci?cation quadruple low capacitance esd suppressor bza800avl series handbook, full pagewidth mle004 450 w 50 w note 1: attenuator is only used for open socket high voltage measurements iec 1000-4-2 network c z = 150 pf; r z = 330 w 1/4 bza800avl rg 223/u 50 w coax r z c z esd tester digitizing oscilloscope 10 attenuator note 1 gnd gnd1 gnd2 gnd3 gnd gnd unclamped + 1 kv esd voltage waveform (iec 1000-4-2 network) clamped + 1 kv esd voltage waveform (iec 1000-4-2 network) unclamped - 1 kv esd voltage waveform (iec 1000-4-2 network) clamped - 1 kv esd voltage waveform (iec 1000-4-2 network) vertical scale = 5 v/div horizontal scale = 50 ns/div bza868avl bza862avl BZA856AVL vertical scale = 200 v/div horizontal scale = 50 ns/div vertical scale = 200 v/div horizontal scale = 50 ns/div vertical scale = 5 v/div horizontal scale = 50 ns/div fig.6 esd clamping test set-up and waveforms.
2003 oct 20 7 philips semiconductors product speci?cation quadruple low capacitance esd suppressor bza800avl series application information typical common anode application a quadruple transient suppressor in a sot353 package makes it possible to protect four separate lines using only one package. two simplified examples are shown in figs.7 and 8. handbook, full pagewidth gnd keyboard, terminal, printer, etc. i/o bza800avl a b c d functional decoder mle006 fig.7 computer interface protection. handbook, full pagewidth mle007 i/o rom ram cpu clock gnd v dd v gg data bus control bus address bus bza800avl fig.8 microprocessor protection.
2003 oct 20 8 philips semiconductors product speci?cation quadruple low capacitance esd suppressor bza800avl series device placement and printed-circuit board layout circuit board layout is of extreme importance in the suppression of transients. the clamping voltage of the bza800avl is determined by the peak transient current and the rate of rise of that current (di/dt). since parasitic inductances can further add to the clamping voltage (v = l di/dt) the series conductor lengths on the printed-circuit board should be kept to a minimum. this includes the lead length of the suppression element. in addition to minimizing conductor length the following printed-circuit board layout guidelines are recommended: 1. place the suppression element close to the input terminals or connectors 2. keep parallel signal paths to a minimum 3. avoid running protection conductors in parallel with unprotected conductors 4. minimize all printed-circuit board loop areas including power and ground loops 5. minimize the length of the transient return path to ground 6. avoid using shared transient return paths to a common ground point.
2003 oct 20 9 philips semiconductors product speci?cation quadruple low capacitance esd suppressor bza800avl series package outline references outline version european projection issue date iec jedec eiaj sot353 wb m b p d e 1 e a a 1 l p q detail x h e e v m a a b y 0 1 2 mm scale c x 13 2 4 5 plastic surface mounted package; 5 leads sot353 unit a 1 max b p cd e (2) e 1 h e l p qy w v mm 0.1 0.30 0.20 2.2 1.8 0.25 0.10 1.35 1.15 0.65 e 1.3 2.2 2.0 0.2 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 0.25 0.15 a 1.1 0.8 97-02-28 sc-88a
2003 oct 20 10 philips semiconductors product speci?cation quadruple low capacitance esd suppressor bza800avl series data sheet status notes 1. please consult the most recently issued data sheet before initiating or completing a design. 2. the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. 3. for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. level data sheet status (1) product status (2)(3) definition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn). definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change notification (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
? koninklijke philips electronics n.v. 2003 sca75 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. philips semiconductors C a worldwide company contact information for additional information please visit http://www.semiconductors.philips.com . fax: +31 40 27 24825 for sales of?ces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com . printed in the netherlands r76/02/pp 11 date of release: 2003 oct 20 document order number: 9397 750 11934

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